Memory (RAM) Memory with Column Address strobe latency (CL): 21, CL operation duration up to 20.1ns, tRCD operation duration from 11.7ns, Active-to-Precharge Time (tRAS): unknown, Listed since: from 2015 Price Comparison Skinflint UK

	Norm:	DDR4(14)
	types:	DDR4(14) DIMM(13) SO-DIMM(1) with ECC(13) without ECC(1) Load-Reduced(1) not Load-Reduced(13) Registered module(12) no Registered module(2) Buffered Memory(13) Unbuffered Memory(1) module without Illumination(14) no NVDIMM(14) DDR4 without Double Capacity(14)
	Manufacturer:	Crucial(2) Kingston(2) Micron(5) Samsung(4) SK hynix(1)
	pack size from:	from 8GB(14) from 16GB(13) from 32GB(12) from 64GB(6)
	pack size to:	up to 8GB(1) up to 16GB(2) up to 32GB(8) up to 64GB(14)
	Single module size:	64GB(6) 32GB(6) 16GB(1) 8GB(1)
	modules Quantity:	1x(14)
	Memory clock:	2933MHz(14)
	Memory clock from:	from 2933MHz(14)
	Memory clock to:	up to 2933MHz(14)
	Column Address strobe latency (CL):	9 10 11 13 14 15 16 17 18 19 20 21(14)remove 22 28 30 32 34 36 38 40 42 44 46 48 all
	CL operation duration from:	from 14.3ns(14)
	CL operation duration to:	up to 14.4ns(14) up to 20.1ns(14)remove all
	Row-to-Column Delay (tRCD):	21(14)
	tRCD operation duration from:	from 11.7ns(14)remove from 14.3ns(14) all
	tRCD operation duration to:	up to 14.4ns(14)
	Row Precharge Time (tRP):	21(14)
	tRP operation duration from:	from 14.3ns(14)
	tRP operation duration to:	up to 14.4ns(14)
	Active-to-Precharge Time (tRAS):	24 28 30 31 32 34 35 36 38 39 40 42 43 45 46 47 50 52 53 68 76 77 78 80 82 83 84 86 88 89 90 96 100 102 104 105 106 108 110 114 115 116 121 125 128 134 unknown(14)remove all
	Rank:	single(2) dual(12)
	Operating voltage according to standard:	1.2V(14)
	Operating voltage according to specification:	1.2V(14)
	Norm-module height (JEDEC):	DDR4 DIMM (31.25mm/1.23")(13) DDRx DIMM/SO-DIMM (30mm/1.18")(1)
	module height from:	from 30mm(14) from 31.25mm(13)
	module height to:	up to 30mm(1) up to 31.25mm(14)
	Case:	not available(14)
	Lighting:	none(14)
	Special features:	Standard-SPD(14) temperature sensor(1)
	Warranty:	3 years(5) 10 years(1) unknown(8)
	Listed since:	from 2015(14)remove from 2019(14) from 2020(9) from 2022(2) from 2023(1) all
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Memory with Column Address strobe latency (CL): 21, CL operation duration up to 20.1ns, tRCD operation duration from 11.7ns, Active-to-Precharge Time (tRAS): unknown, Listed since: from 2015

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Memory (RAM) » Memory with Column Address strobe latency (CL): 21, CL operation duration up to 20.1ns, tRCD operation duration from 11.7ns, Active-to-Precharge Time (tRAS): unknown, Listed since: from 2015

Subkategorie of Memory (RAM)

Memory with Column Address strobe latency (CL): 21, CL operation duration up to 20.1ns, tRCD operation duration from 11.7ns, Active-to-Precharge Time (tRAS): unknown, Listed since: from 2015